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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:cond-mat/0604177 (cond-mat)
[Submitted on 6 Apr 2006]

Title:Ionized Impurity and Surface Roughness Scattering Rates of Electrons in Semiconductor Structures with One-Dimensional Electron Gas and Broadened Energy Levels

Authors:Dmitry Pozdnyakov, Vadim Galenchik, Vladimir Borzdov, Fadei Komarov, Oleg Zhevnyak
View a PDF of the paper titled Ionized Impurity and Surface Roughness Scattering Rates of Electrons in Semiconductor Structures with One-Dimensional Electron Gas and Broadened Energy Levels, by Dmitry Pozdnyakov and 4 other authors
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Abstract: An approach to calculation of the ionized impurity and surface roughness scattering rates of electrons in very thin semiconductor quantum wires taking into account the energy level broadening is worked out. It is assumed that all the electrons in the structure are in the electric quantum limit. The screening is taken into account while considering the ionized impurity scattering. Comparison of the surface roughness scat-tering rates calculated using the exponential and Gaussian autocorrelation functions is done.
Comments: 6 pages, 2 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:cond-mat/0604177 [cond-mat.mes-hall]
  (or arXiv:cond-mat/0604177v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.cond-mat/0604177
arXiv-issued DOI via DataCite
Journal reference: Phys. Low-Dim. Struct. 1, 19-24 (2006)

Submission history

From: Dmitry Pozdnyakov [view email]
[v1] Thu, 6 Apr 2006 15:34:26 UTC (179 KB)
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