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Condensed Matter > Materials Science

arXiv:cond-mat/0507251 (cond-mat)
[Submitted on 11 Jul 2005]

Title:Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission

Authors:J. Lloyd-Hughes (1), E. Castro-Camus (1), M. D. Fraser (2), C. Jagadish (2), M. B. Johnston (1) ((1) University of Oxford, (2) Australian National University)
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Abstract: We have studied terahertz (THz) emission from arsenic-ion implanted GaAs both experimentally and using a three-dimensional carrier dynamics simulation. A uniform density of vacancies was formed over the optical absorption depth of bulk GaAs samples by performing multi-energy implantations of arsenic ions (1 and 2.4MeV) and subsequent thermal annealing. In a series of THz emission experiments the frequency of peak THz power was found to increase significantly from 1.4 to 2.2THz when the ion implantation dose was increased from 10^13 to 10^16 cm-3. We used a semi-classical Monte-Carlo simulation of ultra-fast carrier dynamics to reproduce and explain these results. The effect of the ion-induced damage was included in the simulation by considering carrier scattering at neutral and charged impurities, as well as carrier trapping at defect sites. Higher vacancy concentrations and shorter carrier trapping times both contributed to shorter simulated THz pulses, the latter being more important over experimentally realistic parameter ranges.
Comments: 6 pages, 7 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:cond-mat/0507251 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0507251v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.cond-mat/0507251
Journal reference: Physical Review B 70, 235330 (2005)
Related DOI: https://doi.org/10.1103/PhysRevB.70.235330

Submission history

From: James Lloyd-Hughes [view email]
[v1] Mon, 11 Jul 2005 16:21:42 UTC (43 KB)
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