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Condensed Matter > Strongly Correlated Electrons

arXiv:cond-mat/0505190 (cond-mat)
[Submitted on 8 May 2005]

Title:Orbital Disordering and metal-insulator transition with hole-doping in perovskite-type vanadium oxides

Authors:J. Fujioka, S. Miyasaka, Y. Tokura
View a PDF of the paper titled Orbital Disordering and metal-insulator transition with hole-doping in perovskite-type vanadium oxides, by J. Fujioka and 2 other authors
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Abstract: Filling-control metal-insulator transitions (MITs) and related electronic phase diagrams have been investigated for hole-doped vanadium oxides, Pr_{1-x}Ca_xVO_3, Nd_{1-x}Sr_xVO_3 and Y_{1-x}Ca_xVO_3, with perovskite structure. The increase of the doping level x causes the melting of the G-type (and C-type) orbital order, prior to or concomitantly with the MIT, due partly to the doped-hole motion and partly to the ramdom potential arising from the quenched disorder. In particular, the G-type spin- and C-type orbital-ordered phase present in Y_{1-x}Ca_xVO_3 disappears immediately upon hole doping, around x=0.02. On the other hand, the critical doping level x for MIT is governed by the electron-correlation strength of the undoped parent compound.
Comments: 9pages, 4figures
Subjects: Strongly Correlated Electrons (cond-mat.str-el)
Cite as: arXiv:cond-mat/0505190 [cond-mat.str-el]
  (or arXiv:cond-mat/0505190v1 [cond-mat.str-el] for this version)
  https://doi.org/10.48550/arXiv.cond-mat/0505190
arXiv-issued DOI via DataCite
Related DOI: https://doi.org/10.1103/PhysRevB.72.024460
DOI(s) linking to related resources

Submission history

From: Jun Fujioka [view email]
[v1] Sun, 8 May 2005 07:43:05 UTC (184 KB)
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