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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:cond-mat/0407735 (cond-mat)
[Submitted on 28 Jul 2004]

Title:Tunneling Anisotropic Magnetoresistance: A spin-valve like tunnel magnetoresistance using a single magnetic layer

Authors:C. Gould (1), C. Rüster (1), T. Jungwirth (2,3,4), E. Girgis (1), G. M. Schott (1), R. Giraud (1), K. Brunner (1), G. Schmidt (1), L.W. Molenkamp (1) ((1) Universität Würzburg, Germany, (2) Institut of Physics of Czech Republic, (3) University of Nottingham, UK, (4) University of Texas)
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Abstract: We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal/insulator/ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the anisotropic density of states in (Ga,Mn)As with respect to the magnetization direction, and the two-step magnetization reversal process in this material.
Comments: 4 pages, 4 figures, submitted to PRL
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:cond-mat/0407735 [cond-mat.mes-hall]
  (or arXiv:cond-mat/0407735v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.cond-mat/0407735
arXiv-issued DOI via DataCite
Journal reference: Phys. Rev. Lett. 93, 117203, (2004)
Related DOI: https://doi.org/10.1103/PhysRevLett.93.117203
DOI(s) linking to related resources

Submission history

From: Charles Gould [view email]
[v1] Wed, 28 Jul 2004 17:06:40 UTC (450 KB)
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