Title:Ferromagnetic (Ga,Mn)N epilayers versus antiferromagnetic GaMn$_3$N clusters

Abstract: We report the growth of Mn-doped wurtzite GaN epilayers by nitrogen plasma-assited molecular beam epitaxy. The incorporation of manganese, achieved up to 18%, is found to be very sensitive to the growth conditions. Below about 2% of Mn, correlated structural and magnetic measurements of GaN:Mn clearly demonstrate that the coexistence of room-temperature ferromagnetism with paramagnetism is an intrinsic property of the pure diluted magnetic semiconductor Ga$_{1-x}$Mn$_x$N. In particular, high-temperature hysteresis loops reveal inhomogeneous ferromagnetism, which cannot be attributed to superparamagnetism of unresolved magnetic precipitates. At higher Mn contents, GaMn$_3$N precipitates are evidenced by x-ray diffraction and absorption, and their increasing contribution is no more negligible. These lead, first to a slow magnetic relaxation below 10 K, related to the blocking of small clusters with a finite magnetic moment, and then to a limited magnetisation due to large antiferromagnetic clusters.