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Computer Science > Hardware Architecture

arXiv:2506.21487 (cs)
[Submitted on 26 Jun 2025]

Title:OptGM: An Optimized Gate Merging Method to Mitigate NBTI in Digital Circuits

Authors:Maryam Ghane, Amir M. Hajisadeghi, Hamid R. Zarandi
View a PDF of the paper titled OptGM: An Optimized Gate Merging Method to Mitigate NBTI in Digital Circuits, by Maryam Ghane and 2 other authors
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Abstract:This paper presents OptGM, an optimized gate merging method designed to mitigate negative bias temperature instability (NBTI) in digital circuits. First, the proposed approach effectively identifies NBTI-critical internal nodes, defined as those with a signal probability exceeding a predefined threshold. Next, based on the proposed optimized algorithm, the sensitizer gate (which drives the critical node) and the sensitive gate (which is fed by it) are merged into a new complex gate. This complex gate preserves the original logic while eliminating NBTI-critical nodes. Finally, to evaluate the effectiveness of OptGM, we assess it on several combinational and sequential benchmark circuits. Simulation results demonstrate that, on average, the number of NBTI-critical transistors (i.e., PMOS transistors connected to critical nodes), NBTI-induced delay degradation, and the total transistor count are reduced by 89.29%, 23.87%, and 6.47%, respectively. Furthermore, OptGM enhances performance per cost (PPC) by 12.8% on average, with minimal area overhead.
Subjects: Hardware Architecture (cs.AR)
Cite as: arXiv:2506.21487 [cs.AR]
  (or arXiv:2506.21487v1 [cs.AR] for this version)
  https://doi.org/10.48550/arXiv.2506.21487
arXiv-issued DOI via DataCite (pending registration)

Submission history

From: Amir M. Hajisadeghi [view email]
[v1] Thu, 26 Jun 2025 17:15:55 UTC (4,538 KB)
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