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Condensed Matter > Materials Science

arXiv:2501.13437 (cond-mat)
[Submitted on 23 Jan 2025]

Title:Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

Authors:A. G. Taboada, A. M. Sánchez, A. M. Beltrán, M. Bozkurt, D. Alonso-Álvarez, B. Alén, A. Rivera, J. M. Ripalda, J. M. Llorens, J. Martín-Sánchez, Y. González, J. M. Ulloa, J. M. García, S. I. Molina, P. M. Koenraad
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Abstract:We present experimental evidence of Sb incorporation inside InAs/GaA(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum dots. Atomic force microscopy and transmission electron microscopy micrographs show increased quantum-dot height with Sb flux exposure. The evolution of the reflection high-energy electron-diffraction pattern suggests that the increased height is due to changes in the quantum-dot capping process related to the presence of segregated Sb atoms. These structural and compositional changes result in a shift of the room-temperature photoluminescence emission from 1.26 to 1.36 microns accompanied by an order of magnitude increase in the room-temperature quantum-dot luminescence intensity.
Comments: 16 pages, 11 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2501.13437 [cond-mat.mtrl-sci]
  (or arXiv:2501.13437v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.2501.13437
Journal reference: Phys. Rev. B 82, 235316 (2010)
Related DOI: https://doi.org/10.1103/PhysRevB.82.235316

Submission history

From: Javier Martín-Sánchez [view email]
[v1] Thu, 23 Jan 2025 07:46:25 UTC (676 KB)
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