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Physics > Applied Physics

arXiv:2410.16218 (physics)
[Submitted on 21 Oct 2024]

Title:3 kV Monolithic Bidirectional GaN HEMT on Sapphire

Authors:Md Tahmidul Alam, Swarnav Mukhopadhyay, Md Mobinul Haque, Shubhra S. Pasayat, Chirag Gupta
View a PDF of the paper titled 3 kV Monolithic Bidirectional GaN HEMT on Sapphire, by Md Tahmidul Alam and 4 other authors
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Abstract:More than 3 kV breakdown voltage was demonstrated in monolithic bidirectional GaN HEMTs for the first time having potential applications in 1200V or 1700V-class novel power converters. The on resistance of the fabricated transistors was ~20 this http URL or ~11 mili this http URL^2. Breakdown voltage was optimized by utilizing two field plates in either side of the transistor and optimizing their geometry. Shorter first field plate lengths (less than 2 micron) resulted in higher breakdown voltage and the possible reason for this was discussed. The transistors had a steep subthreshold swing of 92 mV / dec. The on/off ratio was greater than 10^5 and it was limited by the tool capacity. The fabricated 3 kV transistor was benchmarked against the state-of-the-art monolithic bidirectional GaN HEMTs in the performance matrices of breakdown voltage and on resistance, that showed crucial progress.
Comments: 4 pages, 7 figures
Subjects: Applied Physics (physics.app-ph)
Cite as: arXiv:2410.16218 [physics.app-ph]
  (or arXiv:2410.16218v1 [physics.app-ph] for this version)
  https://doi.org/10.48550/arXiv.2410.16218
arXiv-issued DOI via DataCite

Submission history

From: Md Tahmidul Alam [view email]
[v1] Mon, 21 Oct 2024 17:23:03 UTC (1,106 KB)
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