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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:2408.07804 (cond-mat)
[Submitted on 14 Aug 2024]

Title:High-Temperature Quantum Valley Hall Effect with Quantized Resistance and a Topological Switch

Authors:Ke Huang, Hailong Fu, Kenji Watanabe, Takashi Taniguchi, Jun Zhu
View a PDF of the paper titled High-Temperature Quantum Valley Hall Effect with Quantized Resistance and a Topological Switch, by Ke Huang and 4 other authors
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Abstract:Edge states of a topological insulator can be used to explore fundamental science emerging at the interface of low dimensionality and topology. Achieving a robust conductance quantization, however, has proven challenging for helical edge states. Here we show wide resistance plateaus in kink states - a manifestation of the quantum valley Hall effect in Bernal bilayer graphene - quantized to the predicted value at zero magnetic field. The plateau resistance has a very weak temperature dependence up to 50 Kelvin and is flat within a dc bias window of tens of mV. We demonstrate the electrical operation of a topology-controlled switch with an on/off ratio of 200. These results demonstrate the robustness and tunability of the kink states and its promise in constructing electron quantum optics devices.
Comments: 21 pages, 5 main figures, with Supplementary Materials
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2408.07804 [cond-mat.mes-hall]
  (or arXiv:2408.07804v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.2408.07804
arXiv-issued DOI via DataCite
Journal reference: Science 385, 657-661 (2024)
Related DOI: https://doi.org/10.1126/science.adj3742
DOI(s) linking to related resources

Submission history

From: Ke Huang [view email]
[v1] Wed, 14 Aug 2024 20:30:05 UTC (1,329 KB)
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