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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:2403.10898 (cond-mat)
[Submitted on 16 Mar 2024 (v1), last revised 11 Jun 2024 (this version, v2)]

Title:Role of Coulomb interaction in the valley photogalvanic effect

Authors:V. M. Kovalev, A. V. Parafilo, O. V. Kibis, I. G. Savenko
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Abstract:We develop a theory of Coulomb interaction-related contribution to the photogalvanic current of the carriers of charge in two-dimensional non-centrosymmetric Dirac materials possessing a nontrivial structure of valleys and exposed to an external electromagnetic field. The valley photogalvanic effect occurs here due to the trigonal warping of electrons and holes' dispersions in a given valley of the monolayer. We study the low-frequency limit of the external field: The field frequency is smaller than the temperature $T$, and the electron-electron and electron-hole scattering times are much larger than the electron-impurity and hole-impurity scattering times. In this regime, we employ the Boltzmann transport equations and show that electron-hole scattering dominates electron-electron scattering in intrinsic semiconductors. A Coulomb electron-hole interaction-related contribution to the valley photogalvanic current can reduce the value of the bare photogalvanic current as electron and hole currents flow in opposite directions.
Comments: Published version
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Optics (physics.optics)
Cite as: arXiv:2403.10898 [cond-mat.mes-hall]
  (or arXiv:2403.10898v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.2403.10898
Journal reference: Phys. Rev. B 109, 245414 (2024)
Related DOI: https://doi.org/10.1103/PhysRevB.109.245414

Submission history

From: Oleg Kibis [view email]
[v1] Sat, 16 Mar 2024 11:24:53 UTC (601 KB)
[v2] Tue, 11 Jun 2024 22:00:50 UTC (604 KB)
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