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Condensed Matter > Materials Science

arXiv:2402.00583 (cond-mat)
[Submitted on 30 Jan 2024]

Title:High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN

Authors:J. K. Zettler, C. Hauswald, P. Corfdir, M. Musolino, L. Geelhaar, H. Riechert, O. Brandt, S. Fernández-Garrido
View a PDF of the paper titled High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN, by J. K. Zettler and 7 other authors
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Abstract:In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire nucleation. In this work, we present three unconventional growth approaches to minimize the incubation time and thus facilitate significantly higher growth temperatures (up to 875$^{\circ}$C). We achieve this by: (i) using III/V flux ratios larger than one to compensate for Ga desorption, (ii) introducing a two-step growth procedure, and (iii) using an AlN buffer layer to favor GaN nucleation. The GaN nanowire ensembles grown at so far unexplored substrate temperatures exhibit excitonic transitions with sub-meV linewidths and the low-temperature photoluminescence spectra are comparable to those of state-of-the-art free-standing GaN layers grown by hydride vapor phase epitaxy.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2402.00583 [cond-mat.mtrl-sci]
  (or arXiv:2402.00583v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.2402.00583
arXiv-issued DOI via DataCite
Journal reference: Cryst. Growth Des. 2015, 15, 8, 4104
Related DOI: https://doi.org/10.1021/acs.cgd.5b00690
DOI(s) linking to related resources

Submission history

From: Sergio Fernández-Garrido [view email]
[v1] Tue, 30 Jan 2024 11:18:00 UTC (699 KB)
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