Title:Realization of A Superconducting FeTe/Bi$_2$Te$_3$ Heterostructure

Abstract:Before this study, we observed an intriguing occurrence of two-dimensional (2D) superconductivity in two heterostructures, Bi$_2$Te$_3$/FeTe and Sb$_2$Te$_3$/FeTe, which consist of a topological insulator (TI) on top and FeTe on the bottom. The objective of this study was to create an inverted version of the Bi$_2$Te$_3$/FeTe (BT-FT) heterostructure, called FeTe/Bi$_2$Te$_3$ (FT-BT). Through in-situ reflection high-energy electron diffraction (RHEED), high-resolution x-ray diffraction (HRXRD) profiling and cross-sectional scanning transmission electron microscopy (STEM) imaging studies, it was found that at a relatively high growth temperature, FeTe grown on Bi$_2$Te$_3$ led to the extraction of Te from the Bi$_2$Te$_3$ layer, resulting the formation of Bi$_4$Te$_3$ as the bottom layer. This is attributed to the more negative formation energy of FeTe compared to that of Bi$_2$Te$_3$. In addition, a nearly ideal heterostructure of FeTe/Bi$_2$Te$_3$ was successfully fabricated at a lower growth temperature of FeTe with certain Fe and Te cell temperatures. This heterostructure exhibits superconductivity at approximately 12K. These studies present a new approach to realizing the Bi$_4$Te$_3$ component of the Bi-Te system, which could potentially be used to generate other components within the Bi-Te system. The realization of the FeTe/Bi$_2$Te$_3$ inverted heterostructure creates a platform for configuring structures with multiple interfaces between Bi$_2$Te$_3$ and FeTe. This is expected to enhance superconductivity due to its more three-dimensional nature.