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Computer Science > Hardware Architecture

arXiv:2309.12061 (cs)
[Submitted on 21 Sep 2023]

Title:A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory

Authors:Laura Bégon-Lours (1), Mattia Halter (1 and 2), Diana Dávila Pineda (1), Youri Popoff (1 and 2), Valeria Bragaglia (1), Antonio La Porta (1), Daniel Jubin (1), Jean Fompeyrine (1), Bert Jan Offrein (1) ((1) IBM Research Zurich, Rüschlikon, Switzerland and (2) ETH Zürich, Zürich, Switzerland)
View a PDF of the paper titled A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory, by Laura B\'egon-Lours (1) and 11 other authors
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Abstract:A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO$_4$ layer is fabricated at a low thermal budget (~375$^\circ$C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neural network inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cycle and device to device variation <10%, ON/OFF ratio up to 10 and good linearity. The physical mechanisms behind the resistive switching and conduction mechanisms are discussed.
Comments: 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
Subjects: Hardware Architecture (cs.AR)
Cite as: arXiv:2309.12061 [cs.AR]
  (or arXiv:2309.12061v1 [cs.AR] for this version)
  https://doi.org/10.48550/arXiv.2309.12061
arXiv-issued DOI via DataCite
Related DOI: https://doi.org/10.1109/EDTM50988.2021.9420886
DOI(s) linking to related resources

Submission history

From: Laura Bégon-Lours [view email]
[v1] Thu, 21 Sep 2023 13:30:06 UTC (801 KB)
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