Title:$ \mathrm{Sr}_{4}\mathrm{Al}_{2}\mathrm{O}_{7}$: A New Sacrificial Layer with High Water Dissolution Rate for the Synthesis of Freestanding Oxide Membranes

Abstract:Freestanding perovskite oxide membranes have drawn great attention recently since they offer exceptional structural tunability and stacking ability, providing new opportunities in fundamental research and potential device applications in silicon-based semiconductor technology. Among different types of sacrificial layers, the $ \mathrm{(Ca, Sr, Ba)}_{3}\mathrm{Al}_{2}\mathrm{O}_{6}$ compounds are most widely used since they can be dissolved in water and prepare high-quality perovskite oxide membranes with clean and sharp surfaces and interfaces. However, the typical transfer process takes a long time (up to hours) in obtaining millimeter-size freestanding membranes, let alone realize wafer-scale samples with high yield. Here, we introduce a new member of the $ \mathrm{SrO-}\mathrm{Al}_{2}\mathrm{O}_{3}$ family,$ \mathrm{Sr}_{4}\mathrm{Al}_{2}\mathrm{O}_{7},$, and demonstrate its high dissolution rate, about 10 times higher than that of $ \mathrm{Sr}_{3}\mathrm{Al}_{2}\mathrm{O}_{6}$. The high-dissolution-rate of $ \mathrm{Sr}_{4}\mathrm{Al}_{2}\mathrm{O}_{7}$ is most likely related to the more discrete Al-O networks and higher concentration of water-soluble Sr-O species in this compound. Our work significantly facilitates the preparation of freestanding membranes and sheds light on the integration of multifunctional perovskite oxides in practical electronic devices.