Title:Influence of inter-layer interactions and external stimuli on MX$_2$ (M= Mo/W, X= S/Se) heterobilayers

Abstract:Understanding the inter-layer interactions in transition metal dichalcogenides (TMDs) based heterostructures plays a vital role owing to the symmetry of the structure, bandgap nature, and excitonic effects. In this present work, we have studied the structural and electronic properties of MX$_2$ (M= Mo/W, X= S/Se) heterobilayers using first-principles calculations based on density functional theory. Unlike the traditional homobilayers of TMDs, these heterobilayers result in broken inversion symmetry and alter their point group from D$_{3d}$ $\rightarrow$ C$_{3v}$. From the calculated Raman spectra of these heterobilayers, we have observed that the shear and layer breathing modes (LBM) at lower frequencies ($<$ 50 cm$^{-1}$), arise due to the interlayer interactions between the different monolayers. We have simulated the electronic properties using the G$_0$W$_0$ method and perceived the nature of the band gap which mainly depends on the chalcogen atoms. Our results clearly indicate that the band gap is of direct nature for hetero bilayers with different chalcogen atoms and indirect nature for the same chalcogen based heterobilayers, with a band gap range between 1.4 to 1.7 eV. The exciton states of these materials are calculated with the Bethe-Salpeter equation (BSE) and found that the binding energies of inter-layer exciton are of the order of $\sim$ 250 meV, which makes them useful for infrared optoelectronic applications. We have also examined the electronic properties under the effect of minimal strain and twist for different chalcogen-based TMDs, and it shows the band gap tunability from direct to indirect due to interlayer interactions.