Title:Carbon cluster emitters in silicon carbide

Abstract:Silicon carbide in its 4H polytype (4H-SiC) is a promising wide band gap semiconductor for highly-demanding electronic devices, thanks to its high breakdown electrical field, high carrier saturation speed, excellent thermal conductivity, and other favorable properties. Recently, fluorescent high-spin point defects in 4H-SiC, e.g., negatively charged silicon-vacancy and neutral divacancy qubits, have been proven to be outstanding candidates for numerous applications in the rapidly emerging field of quantum technology. In addition, carbon clusters can act as fluorescent centers too that may appear after thermal oxidation of 4H-SiC or using irradiation techniques which kick out carbon atoms from their sites in the SiC crystal. As irradiation techniques are often used to generate vacancy-related qubits, fluorescent carbon clusters may interfere with the already established vacancy-related qubits. In this study, we systematically investigate the electronic structure, formation energy, dissociation energy, vibrational properties and the full fluorescence spectrum of carbon clusters involving up to four carbon atoms in 4H-SiC by means of density functional theory calculations. We considered all the possible local configurations for these carbon clusters. The electronic and vibronic properties of the carbon clusters depend strongly on the actual local configuration of the 4H-SiC lattice. By comparing the calculated and previously observed fluorescence spectra in 4H-SiC, we identify several carbon clusters as stable visible emitters in 4H-SiC.