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Condensed Matter > Materials Science

arXiv:2301.00568 (cond-mat)
[Submitted on 2 Jan 2023]

Title:Edge-based 2D alpha-In2Se3-MoS2 ferroelectric field effect device

Authors:Debopriya Dutta, Subhrajit Mukherjee, Michael Uzhansky, Pranab K. Mohapatra, Ariel Ismach, Elad Koren
View a PDF of the paper titled Edge-based 2D alpha-In2Se3-MoS2 ferroelectric field effect device, by Debopriya Dutta and 4 other authors
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Abstract:Heterostructures based on two dimensional (2D) materials offer the possibility to achieve synergistic functionalities which otherwise remain secluded by their individual counterparts. Herein ferroelectric polarization switching in alpha-In2Se3 has been utilized to engineer multilevel non-volatile conduction states in partially overlapping alpha-In2Se3-MoS2 based ferroelectric semiconducting field effect device. In particular, we demonstrate how the intercoupled ferroelectric nature of alpha-In2Se3 allows to non-volatilely switch between n-i and n-i-n type junction configurations based on a novel edge state actuation mechanism, paving the way for sub-nanometric scale non-volatile device miniaturization. Furthermore the induced asymmetric polarization enables enhanced photogenerated carriers separation resulting in extremely high photoresponse of 1275 AW-1 in the visible range and strong non-volatile modulation of the bright A- and B- excitonic emission channels in the overlaying MoS2 monolayer. Our results show significant potential to harness the switchable polarization in partially overlapping alpha-In2Se3-MoS2 based FeFETs to engineer multimodal non-volatile nanoscale electronic and optoelectronic devices.
Subjects: Materials Science (cond-mat.mtrl-sci); Applied Physics (physics.app-ph)
Cite as: arXiv:2301.00568 [cond-mat.mtrl-sci]
  (or arXiv:2301.00568v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.2301.00568
arXiv-issued DOI via DataCite

Submission history

From: Elad Koren [view email]
[v1] Mon, 2 Jan 2023 09:00:21 UTC (1,314 KB)
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