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Physics > Instrumentation and Detectors

arXiv:2204.00501 (physics)
[Submitted on 1 Apr 2022]

Title:Characterization of Passive CMOS Strip Sensors

Authors:Leena Diehl, Marta Baselga, Ingrid Maria Gregor, Marc Hauser, Tomasz Hemperek, Jan Cedric Hönig, Karl Jakobs, Sven Mägdefessel, Ulrich Parzefall, Arturo Rodriguez, Surabhi Sharma, Dennis Sperlich, Liv Wiik-Fuchs, Tianyang Wang
View a PDF of the paper titled Characterization of Passive CMOS Strip Sensors, by Leena Diehl and 13 other authors
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Abstract:Recent advances in CMOS imaging sensor technology , e.g. in CMOS pixel sensors, have proven that the CMOS process is radiation tolerant enough to cope with certain radiation levels required for tracking layers in hadron collider experiments. With the ever-increasing area covered by silicon tracking detectors cost effective alternatives to the current silicon sensors and more integrated designs are desirable. This article describes results obtained from laboratory measurements of silicon strip sensors produced in a passive p-CMOS process. Electrical characterization and charge collection measurements with a 90Sr source and a laser with infrared wavelength showed no effect of the stitching process on the performance of the sensor.
Comments: 6 pages, 16 figures
Subjects: Instrumentation and Detectors (physics.ins-det); High Energy Physics - Experiment (hep-ex)
Cite as: arXiv:2204.00501 [physics.ins-det]
  (or arXiv:2204.00501v1 [physics.ins-det] for this version)
  https://doi.org/10.48550/arXiv.2204.00501
arXiv-issued DOI via DataCite
Related DOI: https://doi.org/10.1016/j.nima.2022.166671
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Submission history

From: Leena Diehl [view email]
[v1] Fri, 1 Apr 2022 15:00:13 UTC (23,033 KB)
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