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Condensed Matter > Materials Science

arXiv:2203.12172 (cond-mat)
[Submitted on 23 Mar 2022 (v1), last revised 2 Jun 2022 (this version, v2)]

Title:Seebeck-driven transverse thermoelectric generation in on-chip devices

Authors:Weinan Zhou, Takamasa Hirai, Ken-ichi Uchida, Yuya Sakuraba
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Abstract:An unconventional approach to enhance the transverse thermopower by combining magnetic and thermoelectric materials, namely the Seebeck-driven transverse thermoelectric generation (STTG), has been proposed and demonstrated recently. Here, we improve on the previously used sample structure and achieve large transverse thermopower over 40 $\mu$V K$^{-1}$ due to STTG in on-chip devices. We deposited polycrystalline Fe-Ga alloy films directly on n-type Si substrates, where Fe-Ga and Si serve as the magnetic and thermoelectric materials, respectively. Using microfabrication, contact holes were created through the SiO$_{x}$ layer at the top of Si to electrically connect the Fe-Ga film with the Si substrate. These thin devices with simple structure clearly exhibited enhancement of transverse thermopower due to STTG, and the obtained values agreed well with the estimation over a wide range of the size ratio between the Fe-Ga film and the Si substrate.
Comments: 8 pages, 7 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2203.12172 [cond-mat.mtrl-sci]
  (or arXiv:2203.12172v2 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.2203.12172
arXiv-issued DOI via DataCite
Journal reference: J. Phys. D: Appl. Phys. 55, 335002 (2022)
Related DOI: https://doi.org/10.1088/1361-6463/ac717a
DOI(s) linking to related resources

Submission history

From: Weinan Zhou [view email]
[v1] Wed, 23 Mar 2022 03:30:03 UTC (1,811 KB)
[v2] Thu, 2 Jun 2022 07:09:57 UTC (1,814 KB)
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