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Condensed Matter > Materials Science

arXiv:2202.07319 (cond-mat)
[Submitted on 15 Feb 2022]

Title:Layer-dependent Raman spectroscopy and electronic applications of wide-bandgap 2D semiconductor \b{eta}-ZrNCl

Authors:Huiyu Nong, Qinke Wu, Junyang Tan, Yujie Sun, Rongxu Zheng, Rongjie Zhang, Shilong Zhao, Bilu Liu
View a PDF of the paper titled Layer-dependent Raman spectroscopy and electronic applications of wide-bandgap 2D semiconductor \b{eta}-ZrNCl, by Huiyu Nong and 7 other authors
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Abstract:In recent years, two-dimensional (2D) layered semiconductors have received much attention for their potential in next-generation electronics and optoelectronics. Wide-bandgap 2D semiconductors are especially important in blue and ultraviolet wavelength region, while there are very few 2D materials in this region. Here, monolayer \b{eta}-type zirconium nitride chloride (\b{eta}-ZrNCl) is isolated for the first time, which is an air-stable layered material with a bandgap of ~3.0 eV in bulk. Systematical investigation of layer-dependent Raman scattering of ZrNCl from monolayer, bilayer, to bulk reveals a blue shift of its out-of-plane A1g peak at ~189 cm-1. Importantly, this A1g peak is absent in monolayer, suggesting that it is a fingerprint to quickly identify monolayer and for the thickness determination of 2D ZrNCl. The back-gate field-effect transistor based on few-layer ZrNCl shows a high on/off ratio of 108. These results suggest the potential of 2D \b{eta}-ZrNCl for electronic applications.
Comments: 14 pages, 4 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2202.07319 [cond-mat.mtrl-sci]
  (or arXiv:2202.07319v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.2202.07319
arXiv-issued DOI via DataCite

Submission history

From: Bilu Liu [view email]
[v1] Tue, 15 Feb 2022 11:10:20 UTC (1,002 KB)
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