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Condensed Matter > Materials Science

arXiv:2112.02886 (cond-mat)
[Submitted on 6 Dec 2021]

Title:Sliding Ferroelectric Tunnel Junctions

Authors:Jie Yang, Jun Zhou, Jing Lu, Zhaochu Luo, Jinbo Yang, Lei Shen
View a PDF of the paper titled Sliding Ferroelectric Tunnel Junctions, by Jie Yang and 5 other authors
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Abstract:Very recently, ferroelectric polarization in staggered bilayer hexagonal boron nitride (BBN) and its novel sliding inversion mechanism was reported experimentally (Science 2021, 372, 1458; 2021, 372, 1462), which paves a new way to realize van der Waals (vdW) ferroelectric devices with new functionalities. Here, we develop vdW sliding ferroelectric tunnel junctions (FTJs) using the sliding ferroelectric BBN unit as ultrathin barriers and explore their transport properties with different ferroelectric states and metal contacts via the first principles. It is found that the electrode/BBN contact electric field quenches the ferroelectricity in the staggered BBN, resulting a very small tunnelling electroresistance (TER). Inserting high-mobility 2D materials between Au and BN can restore the BBN ferroelectricity, reaching a giant TER of ~10,000% in sliding FTJs. We finally investigate the metal-contact and thickness effect on the tunnelling property of sliding FTJs. The giant TER and multiple non-volatile resistance states in vdW sliding FTJs show the promising applications in voltage-controlled nano-memories with ultrahigh storage density.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2112.02886 [cond-mat.mtrl-sci]
  (or arXiv:2112.02886v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.2112.02886
arXiv-issued DOI via DataCite

Submission history

From: Jie Yang [view email]
[v1] Mon, 6 Dec 2021 09:21:59 UTC (1,133 KB)
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