Title:Unveiling the Role of 2D Monolayer Mn-doped MoS$_2$ Material: Toward an Efficient Electrocatalyst for H$_2$ Evolution Reaction

Abstract:Two-dimensional (2D) monolayer pristine MoS$_2$ transition metal dichalcogenide (TMD) is the most studied material because of its promising aspects as nonprecious electrocatalyst for hydrogen evolution reaction (HER). Previous studies have shown that the basal planes of the 2D MoS$_2$ are catalytically inert and hence, they cannot be used directly in desired applications such as electrochemical HER in industries. Here, we have thoroughly studied the defect-engineered Mn-doped 2D monolayer MoS$_2$ (Mn-MoS$_2$) material where Mn was doped in the pristine MoS$_2$ to activate the inert basal planes. Using density functional theory (DFT) method, we performed rigorous inspection of electronic structures and properties of the 2D monolayer Mn-MoS$_2$ to be a promising alternative to noble metal free catalysts for the effective HER. Periodic 2D slab of the monolayer Mn-MoS$_2$ was created to study the electronic properties and the reaction pathways occurring on the surface of the material. The detailed HER mechanism has been explored by creating the Mn$_1$Mo$_9$S$_{21}$ non-periodic finite molecular cluster model system using M06-L DFT method including solvation effects to determine the reaction barriers and kinetics. Our study reveals that the 2D Mn-MoS$_2$ follows the most favorable Volmer-Heyrovsky reaction mechanism with very low energy barriers during the H$_2$ evolution. It was found that the change of free energy barrier during the Heyrovsky reaction is about 10.34 - 10.79 kcal/mol, indicating an exceptional electrocatalyst for HER. The Tafel slope is lower in the case of 2D monolayer Mn-MoS$_2$ material due to the overlap of the s-orbital of the hydrogen and d-orbitals of the Mn atoms appeared in the HOMO and LUMO transition states (TS1 and TS2) of both the Volmer and Heyrovsky reaction steps.