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Physics > Instrumentation and Detectors

arXiv:2110.05140 (physics)
[Submitted on 11 Oct 2021 (v1), last revised 23 Nov 2021 (this version, v2)]

Title:Characterisation of analogue front end and time walk in CMOS active pixel sensor

Authors:B. Hiti (1), V. Cindro (1), A. Gorišek (1), M. Franks (2), R. Marco-Hernández (3), G. Kramberger (1), I. Mandić (1), M. Mikuž (1 and 4), S. Powell (2), H. Steininger (5), E. Vilella (2), M. Zavrtanik (1), C. Zhang (2) ((1) Jožef Stefan Institute, (2) University of Liverpool, (3) IFIC Valencia, (4) University of Ljubljana, (5) HEPHY Vienna)
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Abstract:In this work we investigated a method to determine time walk in an active silicon pixel sensor prototype using Edge-TCT with infrared laser charge injection. Samples were investigated before and after neutron irradiation to 5e14 neq/cm2. Threshold, noise and calibration of the analogue front end were determined with external charge injection. A spatially sensitive measurement of collected charge and time walk was carried out with Edge-TCT, showing a uniform charge collection and output delay in pixel centre. On pixel edges charge sharing was observed due to finite beam width resulting in smaller signals and larger output delay. Time walk below 25 ns was observed for charge above 2000 electrons at a threshold above the noise level. Time walk measurement with external charge injection yielded identical results.
Subjects: Instrumentation and Detectors (physics.ins-det)
Cite as: arXiv:2110.05140 [physics.ins-det]
  (or arXiv:2110.05140v2 [physics.ins-det] for this version)
  https://doi.org/10.48550/arXiv.2110.05140
Related DOI: https://doi.org/10.1088/1748-0221/16/12/P12020

Submission history

From: Bojan Hiti [view email]
[v1] Mon, 11 Oct 2021 10:31:22 UTC (1,583 KB)
[v2] Tue, 23 Nov 2021 10:36:46 UTC (2,573 KB)
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