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Condensed Matter > Strongly Correlated Electrons

arXiv:2105.06061 (cond-mat)
[Submitted on 13 May 2021]

Title:In situ investigation of conducting interface formation in LaAlO3/SrTiO3 heterostructure

Authors:Hyang Keun Yoo, Luca Moreschini, Aaron Bostwick, Andrew L. Walter, Tae Won Noh, Eli Rotenberg, Young Jun Chang
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Abstract:The high-mobility conducting interface (CI) between LaAlO_{3}(LAO) and SrTiO_{3}(STO) has revealed many fascinating phenomena, including exotic magnetism and superconductivity. But, the formation mechanism of the CI has not been conclusively explained. Here, using in situ angle-resolved photoemission spectroscopy, we elucidated the mechanisms for the CI formation. In as-grown samples, we observed a built-in potential (V_{bi}) proportional to the polar LAO thickness starting from the first unit cell (UC) with CI formation appearing above 3 UCs. However, we found that the V bi is removed by synchrotron ultraviolet (UV)-irradiation; The built-in potential is recovered by oxygen gas (O_{2}(g))-exposure. Furthermore, after UV-irradiation, the CI appears even below 3UC of LAO. Our results demonstrate not only the V_{bi}-driven CI formation in asgrown LAO/STO, but also a new route to control of the interface state by UV lithographic patterning or other surface modification.
Comments: 18 pages, 4 figures
Subjects: Strongly Correlated Electrons (cond-mat.str-el)
Cite as: arXiv:2105.06061 [cond-mat.str-el]
  (or arXiv:2105.06061v1 [cond-mat.str-el] for this version)
  https://doi.org/10.48550/arXiv.2105.06061
Related DOI: https://doi.org/10.1016/j.cap.2021.04.027

Submission history

From: Young Jun Chang [view email]
[v1] Thu, 13 May 2021 03:31:04 UTC (688 KB)
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