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Physics > Applied Physics

arXiv:2009.10952v1 (physics)
[Submitted on 23 Sep 2020 (this version), latest version 1 Dec 2020 (v2)]

Title:Growth and Characterization of Low Sheet Resistance Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels

Authors:Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski, Saurav Roy, Rujun Sun, Michael A. Scarpulla, Nasim Alem, Sriram Krishnamoorthy
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Abstract:We report on growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/ \b{eta}-Ga2O3 modulation-doped heterostructure. Electron channel is realized in the heterostructure by utilizing a delta-doped \b{eta}-(AlxGa1-x)2O3 barrier. Electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall characterization. Hall sheet charge density of 1.1 x 10^13 cm^-2 and mobility of 111 cm^2/Vs is measured at room temperature. Fabricated transistor showed peak current of 22 mA/mm and on-off ratio of 8 x 106. Sheet resistance of 5.3 k{\Omega}/Square is measured at room temperature, which is the lowest reported value for a single \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 heterostructure.
Comments: 14 pages, 5 figures
Subjects: Applied Physics (physics.app-ph); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2009.10952 [physics.app-ph]
  (or arXiv:2009.10952v1 [physics.app-ph] for this version)
  https://doi.org/10.48550/arXiv.2009.10952

Submission history

From: Praneeth Ranga [view email]
[v1] Wed, 23 Sep 2020 06:52:50 UTC (832 KB)
[v2] Tue, 1 Dec 2020 03:30:36 UTC (861 KB)
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