Title:High-speed write properties dependent on external magnetic field in spin orbit torque in-plane magnetoresistance

Abstract:The write properties of the spin orbit torque (SOT) in-plane magnetoresistance (MR) device in a high-speed pulse region spanning a few nanoseconds were compared with those of type-X and type-Y devices. We measured the external perpendicular magnetic field dependence of the threshold write current density, Jth, and the write current switching probability in a type-X device. In addition, we compared the write current switching probabilities of the type-X and type-Y devices. The results showed that the type-X device required Hz higher than 1100 Oe in the region with write pulse width less than 2 ns, for Jth obtained in the type-X device to be lower compared with that in the type-Y device. The external perpendicular magnetic field required in the type-X device was dependent on the effective in-plane magnetic anisotropy field. Therefore, the effective in-plane magnetic anisotropy field, including the demagnetization field, shape anisotropy field, and perpendicular magnetic anisotropy field, was estimated using spin-torque ferromagnetic resonance (ST-FMR) measurement. Although a high perpendicular magnetic anisotropy field was applied to the in-plane magnetization, the type-X device required a high external magnetic field. Therefore, if a SOT device can be applied to a high external magnetic field, the type-X device can be employed owing to its high-speed writing and precipitous change of write probability. However, the application structure for the external magnetic field should be designed catering to its high stability and low variation. The requirement of no external magnetic field is the prime advantage of type-Y devices.