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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:2006.16127 (cond-mat)
[Submitted on 29 Jun 2020 (v1), last revised 15 Sep 2020 (this version, v2)]

Title:Excited states of a phosphorus pair in silicon: Effects of valley-orbital interaction and electron-electron interactions

Authors:Wei Wu, A.J. Fisher
View a PDF of the paper titled Excited states of a phosphorus pair in silicon: Effects of valley-orbital interaction and electron-electron interactions, by Wei Wu and A.J. Fisher
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Abstract:Excitations of impurity complexes in semiconductors can not only provide a route to fill the terahertz gap in optical technologies, but can also connect local quantum bits to scale up solid-state quantum-computing devices. However, taking into account both the interactions among electrons/holes, and the host band structures, is challenging. Here we combine first-principles band-structure calculations with quantum-chemistry methodology to evaluate the ground and excited states of a pair of phosphorous donors in silicon within s single framework. We use a broken-symmetry Hartree-Fock approach, followed by a time-dependent Hartree-Fock method to compute the excited states. Our Hamiltonian for each valley includes an anisotropic kinetic energy term, which splits the 2p_0 and 2p_+- transitions of isolated donors by ~4 meV, in good agreement with experiments. Our single-valley calculations show the optical response is a strong function of the optical polarisation, and suggest the use of valley polarisation to control optics and reduce oscillations in exchange interactions. When taking into account all valleys, including valley-orbital interactions, we find a gap opens between the 1s to 2p transition and low-energy charge-transfer states within 1s manifolds (which become optically allowed because of inter-donor interactions). In contrast to the single-valley case, we find charge-transfer excited states also in the triplet sector, thanks to the valley degrees of freedom. These states have a qualitatively correct energy as compared with the previous experiments; additionally, we predict new excitations below 20 meV that have not been analysed previously. A statistical average of nearest-neighbour pairs at different separations suggests that THz radiation could be used to excite pairs spin-selectively. Our approach can readily be extended to other donors and to other semiconducting hosts.
Comments: 12 pages, 8 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2006.16127 [cond-mat.mes-hall]
  (or arXiv:2006.16127v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.2006.16127
arXiv-issued DOI via DataCite
Journal reference: Phys. Rev. B 104, 035433 (2021)
Related DOI: https://doi.org/10.1103/PhysRevB.104.035433
DOI(s) linking to related resources

Submission history

From: Andrew Fisher [view email]
[v1] Mon, 29 Jun 2020 15:45:33 UTC (3,054 KB)
[v2] Tue, 15 Sep 2020 04:29:34 UTC (3,054 KB)
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