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Condensed Matter > Materials Science

arXiv:2005.02663 (cond-mat)
[Submitted on 6 May 2020]

Title:Robust Magnetoelectric Effect in Decorated Graphene/In2Se3 Heterostructure

Authors:Jing Shang, Xiao Tang, Yuantong Gu, Arkady V. Krasheninnikov, Silvia Picozzi, Changfeng Chen, Liangzhi Kou
View a PDF of the paper titled Robust Magnetoelectric Effect in Decorated Graphene/In2Se3 Heterostructure, by Jing Shang and 6 other authors
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Abstract:Magnetoelectric effect is a fundamental physics phenomenon that synergizes electric and magnetic degrees of freedom to generate distinct material responses like electrically tuned magnetism, which serves as a key foundation of the emerging field of spintronics. Here, we show by first-principles studies that ferroelectric (FE) polarization of an In2Se3 monolayer can modulate the magnetism of an adjacent transition-metal (TM) decorated graphene layer via an FE induced electronic transition. The TM nonbonding d-orbital shifts downward and hybridizes with carbon p states near the Fermi level, suppressing the magnetic moment, under one FE polarization, but on reversed FE polarization this TM d-orbital moves upward, restoring the original magnetic moment. This finding of robust magnetoelectric effect in TM decorated graphene/In2Se3 heterostructure offers powerful insights and a promising avenue for experimental exploration of FE controlled magnetism in 2D materials.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2005.02663 [cond-mat.mtrl-sci]
  (or arXiv:2005.02663v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.2005.02663
arXiv-issued DOI via DataCite

Submission history

From: Liangzhi Kou Dr. [view email]
[v1] Wed, 6 May 2020 09:03:25 UTC (1,621 KB)
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