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Condensed Matter > Materials Science

arXiv:2004.03284 (cond-mat)
[Submitted on 7 Apr 2020]

Title:Temperature dependence of transport mechanisms in organic multiferroic tunnel junctions

Authors:Can Xiao, Huawei Sun, Luming Cheng, Xavier Devaux, Anthony Ferri, Weichuan Huang, Rachel Desfeux, Xiao-Guang Li, Sylvie Migot, Mairbek Chshiev, Sajid Rauf, Yajun Qi, Ruilong Wang, Tianjin Zhang, Changping Yang, Shiheng Liang, Yuan Lu
View a PDF of the paper titled Temperature dependence of transport mechanisms in organic multiferroic tunnel junctions, by Can Xiao and 15 other authors
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Abstract:Organic multiferroic tunnel junctions (OMFTJs) with multi-resistance states have been proposed and drawn intensive interests due to their potential applications, for examples of memristor and spintronics based synapse devices. The ferroelectric control of spin-polarization at ferromagnet (FM)/ferroelectric organic (FE-Org) interface by electrically switching the ferroelectric polarization of the FE-Org has been recently realized. However, there is still a lack of understanding of the transport properties in OMFTJs, especially the interplay between the ferroelectric domain structure in the organic barrier and the spin-polarized electron tunneling through the barrier. Here, we report on a systematic study of the temperature dependent transport behavior in La0.6Sr0.4MnO3/PVDF/Co OMFTJs. It is found that the thermal fluctuation of the ferroelectric domains plays an important role on the transport properties. When T>120K, the opposite temperature dependence of resistance for in up and down ferroelectric polarization states results in a rapid diminishing of tunneling electroresistance (TER). These results contribute to the understanding of the transport properties for designing high performance OMFTJs for memristor and spintronics applications.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2004.03284 [cond-mat.mtrl-sci]
  (or arXiv:2004.03284v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.2004.03284
arXiv-issued DOI via DataCite
Journal reference: J. Phys. D: Appl. Phys. 2020
Related DOI: https://doi.org/10.1088/1361-6463/ab841b
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Submission history

From: Yuan Lu [view email]
[v1] Tue, 7 Apr 2020 11:43:27 UTC (1,581 KB)
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