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Condensed Matter > Materials Science

arXiv:1912.06592 (cond-mat)
[Submitted on 13 Dec 2019 (v1), last revised 21 Apr 2020 (this version, v2)]

Title:Effects of nitridation on SiC/SiO$_2$ structures studied by hard X-ray photoelectron spectroscopy

Authors:Judith Berens, Sebastian Bichelmaier, Nathalie K. Fernando, Pardeep K. Thakur, Tien-Lin Lee, Manfred Mascheck, Tomas Wiell, Susanna K. Eriksson, J. Matthias Kahk, Johannes Lischner, Manesh V. Mistry, Thomas Aichinger, Gregor Pobegen, Anna Regoutz
View a PDF of the paper titled Effects of nitridation on SiC/SiO$_2$ structures studied by hard X-ray photoelectron spectroscopy, by Judith Berens and 13 other authors
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Abstract:SiC is set to enable a new era in power electronics impacting a wide range of energy technologies, from electric vehicles to renewable energy. Its physical characteristics outperform silicon in many aspects, including band gap, breakdown field, and thermal conductivity. The main challenge for further development of SiC-based power semiconductor devices is the quality of the interface between SiC and its native dielectric SiO$_2$. High temperature nitridation processes can improve the interface quality and ultimately the device performance immensely, but the underlying chemical processes are still poorly understood. Here, we present an energy-dependent hard X-ray photoelectron spectroscopy (HAXPES) study probing non-destructively SiC and SiO$_2$ and their interface in device stacks treated in varying atmospheres. We successfully combine laboratory- and synchrotron-based HAXPES to provide unique insights into the chemistry of interface defects and their passivation through nitridation processes.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1912.06592 [cond-mat.mtrl-sci]
  (or arXiv:1912.06592v2 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1912.06592
arXiv-issued DOI via DataCite

Submission history

From: Anna Regoutz [view email]
[v1] Fri, 13 Dec 2019 16:35:01 UTC (2,983 KB)
[v2] Tue, 21 Apr 2020 12:31:04 UTC (2,901 KB)
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