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Physics > Applied Physics

arXiv:1909.03035 (physics)
[Submitted on 6 Sep 2019]

Title:Ultra-low dissipation patterned silicon nanowire arrays for scanning probe microscopy

Authors:Pardis Sahafi, William Rose, Andrew Jordan, Ben Yager, Michèle Piscitelli, Raffi Budakian
View a PDF of the paper titled Ultra-low dissipation patterned silicon nanowire arrays for scanning probe microscopy, by Pardis Sahafi and 5 other authors
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Abstract:In recent years, self-assembled semiconductor nanowires have been successfully used as ultra-sensitive cantilevers in a number of unique scanning probe microscopy (SPM) settings. We describe the fabrication of ultra-low dissipation patterned silicon nanowire (SiNW) arrays optimized for scanning probe applications. Our fabrication process produces, with high yield, ultra-high aspect ratio vertical SiNWs that exhibit exceptional force sensitivity. The highest sensitivity SiNWs have thermomechanical-noise limited force sensitivity of $9.7\pm0.4~\text{aN}/\sqrt{\text{Hz}}$ at room temperature and $500\pm20~\text{zN}/\sqrt{\text{Hz}}$ at 4 K. To facilitate their use in SPM, the SiNWs are patterned within $7~\mu\text{m}$ from the edge of the substrate, allowing convenient optical access for displacement detection.
Comments: Main text: 16 pages, 3 figures and 2 tables. Supplements: 11 pages, 7 figures and 1 table
Subjects: Applied Physics (physics.app-ph)
Cite as: arXiv:1909.03035 [physics.app-ph]
  (or arXiv:1909.03035v1 [physics.app-ph] for this version)
  https://doi.org/10.48550/arXiv.1909.03035
arXiv-issued DOI via DataCite
Related DOI: https://doi.org/10.1021/acs.nanolett.9b03668
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Submission history

From: Pardis Sahafi [view email]
[v1] Fri, 6 Sep 2019 17:41:57 UTC (5,154 KB)
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