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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1907.10495v2 (cond-mat)
[Submitted on 22 Jul 2019 (v1), last revised 30 Jul 2019 (this version, v2)]

Title:Drain Current Model of One-Dimensional Ballistic Reconfigurable Transistors

Authors:Igor Bejenari
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Abstract:A simple model based on the WKB approximation for one-dimensional ballistic multi--gate reconfigurable field--effect transistors (RFETs) with Schottky-Barrier contacts has been developed for the drain current taking into account electron and hole band-to-band tunneling. By using a proper approximation of both the Fermi-Dirac distribution function and transmission probability, an analytical solution for the Landauer integral can be obtained. A comparative analysis of the two-gate and triple-gate RFETs is performed based on the numerical integration of the current integral.
Comments: 6 pages, 3 figures. This article provides original results, although it contains a certain amount of text reused from arXiv:1703.05092. The relationship between these works includes the similar motivation, model limitation, approximation of the electron distribution, and importance of findings
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1907.10495 [cond-mat.mes-hall]
  (or arXiv:1907.10495v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1907.10495

Submission history

From: Igor Bejenari [view email]
[v1] Mon, 22 Jul 2019 12:16:16 UTC (104 KB)
[v2] Tue, 30 Jul 2019 06:20:48 UTC (104 KB)
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