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Physics > Applied Physics

arXiv:1907.08429 (physics)
[Submitted on 19 Jul 2019 (v1), last revised 18 Sep 2019 (this version, v2)]

Title:Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

Authors:Amin Rassekh, Farzan Jazaeri, Morteza Fathipour, Jean-Michel Sallese
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Abstract:In this paper, an analytical predictive model of interface charge traps in symmetric long channel double-gate junctionless transistors is proposed based on a charge-based model. Interface charge traps arising from the exposure to chemicals, high-energy ionizing radiation or aging mechanism could degrade the charge-voltage characteristics. The model is predictive in a range of temperature from 77K to 400K. The validity of the approach is confirmed by extensive comparisons with numerical TCAD simulations in all regions of operation from deep depletion to accumulation and linear to saturation.
Subjects: Applied Physics (physics.app-ph)
Cite as: arXiv:1907.08429 [physics.app-ph]
  (or arXiv:1907.08429v2 [physics.app-ph] for this version)
  https://doi.org/10.48550/arXiv.1907.08429
Related DOI: https://doi.org/10.1109/TED.2019.2944193

Submission history

From: Amin Rassekh [view email]
[v1] Fri, 19 Jul 2019 09:41:35 UTC (3,130 KB)
[v2] Wed, 18 Sep 2019 16:50:34 UTC (3,251 KB)
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