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Condensed Matter > Materials Science

arXiv:1907.05544 (cond-mat)
[Submitted on 12 Jul 2019]

Title:Electrical current switching of the noncollinear antiferromagnet Mn$_3$GaN

Authors:T. Hajiri, S. Ishino, K. Matsuura, H. Asano
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Abstract:We report electrical current switching of noncollinear antiferromagnetic (AFM) Mn$_3$GaN/Pt bilayers at room temperature. The Hall resistance of these bilayers can be manipulated by applying a pulse current of $1.5\times10^6$~A/cm$^2$, whereas no significant change is observed up to $\sim10^8$~A/cm$^2$ in Mn$_3$GaN single films, indicating that the Pt layer plays an important role. In comparison with ferrimagnetic Mn$_3$GaN/Pt bilayers, a lower electrical current switching of noncollinear AFM Mn$_3$GaN is demonstrated, with a critical current density two orders of magnitude smaller. Our results highlight that a combination of a noncollinear AFM antiperovskite nitride and a spin-torque technique is a good platform of AFM spintronics.
Comments: The following article has been accepted by Applied Physics Letter
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1907.05544 [cond-mat.mtrl-sci]
  (or arXiv:1907.05544v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1907.05544
Journal reference: Appl. Phys. Lett. 115, 052403 (2019)
Related DOI: https://doi.org/10.1063/1.5109317

Submission history

From: Tetsuya Hajiri [view email]
[v1] Fri, 12 Jul 2019 01:44:13 UTC (1,602 KB)
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