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Condensed Matter > Materials Science

arXiv:1907.04992 (cond-mat)
[Submitted on 11 Jul 2019]

Title:Valley-Contrasting Orbital Magnetic Moment Induced Negative Magnetoresistance

Authors:Hailong Zhou, Cong Xiao, Qian Niu
View a PDF of the paper titled Valley-Contrasting Orbital Magnetic Moment Induced Negative Magnetoresistance, by Hailong Zhou and 2 other authors
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Abstract:The valley-contrasting orbital magnetic moment of Bloch electrons allows the lifting of valley degeneracy by an out-of-plane magnetic field. We demonstrate that this leads to negative magnetoresistance, utilizing a gapped two-dimensional multi-valley model as an example. An intuitive physical picture in terms of the increased carrier density from a magnetic gating effect is proposed for this negative magnetoresistance. In particular, giant negative magnetoresistance is achieved after one of the two valleys is depleted by the magnetic field. This new mechanism of negative magnetoresistance is argued to be relevant in ionic-liquid gated gapped graphene with small effective mass.
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1907.04992 [cond-mat.mtrl-sci]
  (or arXiv:1907.04992v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1907.04992
arXiv-issued DOI via DataCite
Journal reference: Phys. Rev. B 100, 041406 (2019)
Related DOI: https://doi.org/10.1103/PhysRevB.100.041406
DOI(s) linking to related resources

Submission history

From: Hailong Zhou [view email]
[v1] Thu, 11 Jul 2019 04:31:44 UTC (29 KB)
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