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Physics > Applied Physics

arXiv:1906.02848 (physics)
[Submitted on 7 Jun 2019]

Title:Si-based GeSn photodetectors towards mid-infrared imaging applications

Authors:Huong Tran, Thach Pham, Joe Margetis, Yiyin Zhou, Wei Dou, Perry C. Grant, Joshua M. Grant, Sattar Alkabi, Greg Sun, Richard A. Soref, John Tolle, Yong-Hang Zhang, Wei Du, Baohua Li, Mansour Mortazavi, Shui-Qing Yu
View a PDF of the paper titled Si-based GeSn photodetectors towards mid-infrared imaging applications, by Huong Tran and 15 other authors
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Abstract:This paper reports a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes: 1) the demonstration of a set of photoconductors with Sn compositions ranging from 10.5% to 22.3%, showing the cut-off wavelength has been extended to 3.65 um. The measured maximum D* of 1.1x10^10 cmHz^(1/2)W(-1) is comparable to that of commercial extended-InGaAs detectors; 2) the development of surface passivation technique on photodiode based on in-depth analysis of dark current mechanism, effectively reducing the dark current. Moreover, mid-infrared images were obtained using GeSn photodetectors, showing the comparable image quality with that acquired by using commercial PbSe detectors.
Comments: 25 pages, 8 figures
Subjects: Applied Physics (physics.app-ph)
Cite as: arXiv:1906.02848 [physics.app-ph]
  (or arXiv:1906.02848v1 [physics.app-ph] for this version)
  https://doi.org/10.48550/arXiv.1906.02848
arXiv-issued DOI via DataCite

Submission history

From: Wei Du [view email]
[v1] Fri, 7 Jun 2019 00:44:58 UTC (1,317 KB)
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