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Condensed Matter > Materials Science

arXiv:1905.10667 (cond-mat)
[Submitted on 25 May 2019]

Title:A comprehensive model of high-concentration phosphorus diffusion in silicon

Authors:O.I. Velichko
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Abstract:A comprehensive model of high-concentration phosphorus diffusion has been developed and simulation of phosphorus diffusion from a constant source (phosphosilicate glass) at a temperature of 890 Celsius degrees for 14.25 min. has been carried out. Such doping processes are widely used in manufacturing modern solar cells. The proposed model combines the ideas of the drift of silicon self-interstitials in the field of elastic stresses with the concept of the formation of negatively charge clusters of impurity atoms. The calculated phosphorus concentration profile is in good agreement with the experimental one.
Comments: 8 pages, 2 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1905.10667 [cond-mat.mtrl-sci]
  (or arXiv:1905.10667v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1905.10667

Submission history

From: Oleg Velichko [view email]
[v1] Sat, 25 May 2019 19:49:52 UTC (68 KB)
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