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Condensed Matter > Materials Science

arXiv:1905.04563 (cond-mat)
[Submitted on 11 May 2019]

Title:Separating Electrons and Donors in BaSnO3 via Band Engineering

Authors:Abhinav Prakash, Nicholas F. Quackenbush, Hwanhui Yun, Jacob Held, Tianqi Wang, Tristan Truttmann, James M. Ablett, Conan Weiland, Tien-Lin Lee, Joseph C. Woicik, K. Andre Mkhoyan, Bharat Jalan
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Abstract:Through a combination of thin film growth, hard X-ray photoelectron spectroscopy (HAXPES), scanning transmission electron microscopy/electron energy loss spectroscopy (STEM/EELS), magneto-transport measurements, and transport modeling, we report on the demonstration of modulation-doping of BaSnO3 (BSO) using a wider bandgap La-doped SrSnO3 (LSSO) layer. Hard X-ray photoelectron spectroscopy (HAXPES) revealed a valence band offset of 0.71 +/- 0.02 eV between LSSO and BSO resulting in a favorable conduction band offset for remote doping of BSO using LSSO. Nonlinear Hall effect of LSSO/BSO heterostructure confirmed two-channel conduction owing to electron transfer from LSSO to BSO and remained in good agreement with the results of self-consistent solution to one-dimensional Poisson and Schrödinger equations. Angle-dependent HAXPES measurements revealed a spatial distribution of electrons over 2-3 unit cells in BSO. These results bring perovskite oxides a step closer to room-temperature oxide electronics by establishing modulation-doping approaches in non-SrTiO3-based oxide heterostructure.
Subjects: Materials Science (cond-mat.mtrl-sci); Quantum Gases (cond-mat.quant-gas)
Cite as: arXiv:1905.04563 [cond-mat.mtrl-sci]
  (or arXiv:1905.04563v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1905.04563
Related DOI: https://doi.org/10.1021/acs.nanolett.9b03825

Submission history

From: Bharat Jalan [view email]
[v1] Sat, 11 May 2019 17:58:12 UTC (3,157 KB)
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