Title:Microwave response of a hafnium microbridge at millikelvin temperatures

Abstract:We analyze the microwave-driven transition of a superconducting bridge into its normal state. The micro-bridge made from Hf is studied well below its critical temperature, Tc=375 mK, for a number of bath temperatures down to 30 mK. The bridge sized 2.5 {\mu}m by 2.5 {\mu}m by 50 nm was integrated near the open end of 1.5-GHz CPW quarter-wave resonator made from Nb yielding the Q-factor about $10^4$. The integrated circuit is designed for FDM readout of the bridge impedance and operates similar to MKID. We observe a smooth dependence of the Q-factor and S21, the transmission parameter of the chip, on applied microwave power. A novel method of steady state Q-factor is used for evaluating thermal conductance of the bridge. The microwave power absorbed by the bridge is found fitting the model of hot electron gas, $P=a({Te}^6-{Tph}^6)$, that allows to calculate thermal conductance of the bridge and evaluate NEP down to $10^{-18}$ W/Hz$^{1/2}$. This number estimated for the first experiment can be scaled down to and below $10^{-19}$ W/Hz$^{1/2}$ via reduction of both the bridge size and Tc of the hafnium film. Since it was found that the major part of the microwave impedance is active, the proposed detection technology is beneficial for reducing phase jitter in a high-Q resonator. According to our experimental data, a bridge made from Hf may operate as a THz signal sensor using readout frequencies above few GHz.