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Computer Science > Emerging Technologies

arXiv:1809.08195 (cs)
[Submitted on 21 Sep 2018]

Title:Crossbar-Constrained Technology Mapping for ReRAM based In-Memory Computing

Authors:Debjyoti Bhattacharjee, Yaswanth Tavva, Arvind Easwaran, Anupam Chattopadhyay
View a PDF of the paper titled Crossbar-Constrained Technology Mapping for ReRAM based In-Memory Computing, by Debjyoti Bhattacharjee and 3 other authors
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Abstract:In recent times, Resistive RAMs (ReRAMs) have gained significant prominence due to their unique feature of supporting both non-volatile storage and logic capabilities. ReRAM is also reported to provide extremely low power consumption compared to the standard CMOS storage devices. As a result, researchers have explored the mapping and design of diverse applications, ranging from arithmetic to neuromorphic computing structures to ReRAM-based platforms. ReVAMP, a general-purpose ReRAM computing platform, has been proposed recently to leverage the parallelism exhibited in a crossbar structure. However, the technology mapping on ReVAMP remains an open challenge. Though the technology mapping with device/area-constraints have been proposed, crossbar constraints are not considered so far. In this work, we address this problem. Two technology mapping flows are proposed, considering different runtime-efficiency trade-offs. Both the mapping flows take crossbar constraints into account and generate feasible mapping for a variety of crossbar dimensions. Our proposed algorithms are highly scalable and reveal important design hints for ReRAM-based implementations.
Subjects: Emerging Technologies (cs.ET)
Cite as: arXiv:1809.08195 [cs.ET]
  (or arXiv:1809.08195v1 [cs.ET] for this version)
  https://doi.org/10.48550/arXiv.1809.08195
arXiv-issued DOI via DataCite

Submission history

From: Debjyoti Bhattacharjee [view email]
[v1] Fri, 21 Sep 2018 16:28:11 UTC (2,688 KB)
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Debjyoti Bhattacharjee
Yaswanth Tavva
Arvind Easwaran
Anupam Chattopadhyay
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