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Condensed Matter > Materials Science

arXiv:1805.12200 (cond-mat)
[Submitted on 30 May 2018 (v1), last revised 5 Apr 2019 (this version, v2)]

Title:Planar Hall effect in antiferromagnetic MnTe thin films

Authors:Gen Yin, Jie-Xiang Yu, Yizhou Liu, Roger K. Lake, Jiadong Zang, Kang L. Wang
View a PDF of the paper titled Planar Hall effect in antiferromagnetic MnTe thin films, by Gen Yin and 5 other authors
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Abstract:We show that the spin-orbit coupling (SOC) in alpha-MnTe impacts the transport behavior by generating an anisotropic valence-band splitting, resulting in four spin-polarized pockets near Gamma. A minimal k-dot-p model is constructed to capture this splitting by group theory analysis, a tight-binding model and ab initio calculations. The model is shown to describe the rotation symmetry of the zero-field planer Hall effect (PHE). The upper limit of the PHE percentage is shown to be fundamentally determined by the band shape, and is quantitatively estimated to be roughly 31% by first principles.
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1805.12200 [cond-mat.mtrl-sci]
  (or arXiv:1805.12200v2 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1805.12200
arXiv-issued DOI via DataCite
Journal reference: Phys. Rev. Lett. 122, 106602 (2019)
Related DOI: https://doi.org/10.1103/PhysRevLett.122.106602
DOI(s) linking to related resources

Submission history

From: Gen Yin [view email]
[v1] Wed, 30 May 2018 19:58:00 UTC (5,615 KB)
[v2] Fri, 5 Apr 2019 18:30:23 UTC (5,540 KB)
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