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Condensed Matter > Materials Science

arXiv:1805.11961 (cond-mat)
[Submitted on 30 May 2018]

Title:Quantum anomalous Hall effect in metal-bis(dithiolene), magnetic properties, doping and interfacing graphene

Authors:F. Crasto de Lima, G. J. Ferreira, R. H. Miwa
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Abstract:The realization of the Quantum anomalous Hall effect (QAHE) in two dimensional (2D) metal organic frameworks (MOFs), (MC$_4$S$_4$)$_3$ with M = Mn, Fe, Co, Ru and Rh, has been investigated based on a combination of first-principles calculations and tight binding models. Our results for the magnetic anisotropy energy (MAE) reveal that the out-of-plane (in-plane) magnetization is favored for M = Mn, Fe, and Ru (Co, and Rh). Given the structural symmetry of (MC$_4$S$_4$)$_3$, the QAHE takes place only for M = Mn, Fe and Ru. Such a quantum anomalous Hall phase has been confirmed through the calculation of the Chern number, and examining the formation of topologically protected (metallic) edge states. Further electron ($n$-type) doping of the MOFs has been done in order to place the Fermi level within the non-trivial energy gap; where we find that in (RuC$_4$S$_4$)$_3$, in addition to the up-shift of the Fermi level, the MAE energy increases by 40\%. Finally, we show that in MOF/graphene (vdW) interfaces, the Fermi level tunning can be done with an external electric field, which controls the charge transfer at the MOF/graphene interface, giving rise to switchable topologically protected edge currents in MOFs.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1805.11961 [cond-mat.mtrl-sci]
  (or arXiv:1805.11961v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1805.11961
Related DOI: https://doi.org/10.1039/C8CP03792B

Submission history

From: Felipe Crasto de Lima [view email]
[v1] Wed, 30 May 2018 13:47:08 UTC (4,306 KB)
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