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Mathematics > Analysis of PDEs

arXiv:1805.01348 (math)
[Submitted on 3 May 2018]

Title:The 3D transient semiconductor equations with gradient-dependent and interfacial recombination

Authors:Karoline Disser, Joachim Rehberg
View a PDF of the paper titled The 3D transient semiconductor equations with gradient-dependent and interfacial recombination, by Karoline Disser and Joachim Rehberg
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Abstract:We establish the well-posedness of the transient van Roosbroeck system in three space dimensions under realistic assumptions on the data: non-smooth domains, discontinuous coefficient functions and mixed boundary conditions. Moreover, within this analysis, recombination terms may be concentrated on surfaces and interfaces and may not only depend on charge-carrier densities, but also on the electric field and currents. In particular, this includes Avalanche recombination. The proofs are based on recent abstract results on maximal parabolic and optimal elliptic regularity of divergence-form operators.
Comments: 35 pages, 2 figures
Subjects: Analysis of PDEs (math.AP)
Cite as: arXiv:1805.01348 [math.AP]
  (or arXiv:1805.01348v1 [math.AP] for this version)
  https://doi.org/10.48550/arXiv.1805.01348
arXiv-issued DOI via DataCite

Submission history

From: Karoline Disser [view email]
[v1] Thu, 3 May 2018 15:02:24 UTC (52 KB)
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