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Condensed Matter > Materials Science

arXiv:1804.07841 (cond-mat)
[Submitted on 20 Apr 2018]

Title:Connection topology of step edge state bands at the surface of a three dimensional topological insulator

Authors:Yishuai Xu, Guodong Jiang, Janet Chiu, Lin Miao, Erica Kotta, Yutan Zhang, Rudro R. Biswas, L. Andrew Wray
View a PDF of the paper titled Connection topology of step edge state bands at the surface of a three dimensional topological insulator, by Yishuai Xu and 7 other authors
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Abstract:Topological insulators in the Bi$_2$Se$_3$ family manifest helical Dirac surface states that span the topologically ordered bulk band gap. Recent scanning tunneling microscopy measurements have discovered additional states in the bulk band gap of Bi$_2$Se$_3$ and Bi$_2$Te$_3$, localized at one dimensional step edges. Here numerical simulations of a topological insulator surface are used to explore the phenomenology of edge state formation at the single-quintuple-layer step defects found ubiquitously on these materials. The modeled one dimensional edge states are found to exhibit a stable topological connection to the two dimensional surface state Dirac point.
Comments: Text and two appendices (4+3 figures)
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1804.07841 [cond-mat.mtrl-sci]
  (or arXiv:1804.07841v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1804.07841
arXiv-issued DOI via DataCite
Related DOI: https://doi.org/10.1088/1367-2630/aacef6
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Submission history

From: L. Andrew Wray [view email]
[v1] Fri, 20 Apr 2018 21:56:50 UTC (8,861 KB)
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