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Physics > Applied Physics

arXiv:1802.03150 (physics)
[Submitted on 9 Feb 2018 (v1), last revised 27 Jul 2018 (this version, v2)]

Title:Wafer-scale all-epitaxial GeSn-on-insulator on Si(111) by molecular beam epitaxy

Authors:Krista R Khiangte, Jaswant S Rathore, J. Schmidt, H. J. Osten, A. Laha, S. Mahapatra
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Abstract:All epitaxial GeSn-on-insulator (GeSnOI) heterostructures have been realized by conventional molecular beam epitaxy of both GeSn and a thin Gd2O3 insulating layer, on Si(111) substrates. Analysis of the crystal and surface quality by high-resolution transmission electron microscopy (HRTEM), high-resolution X-ray diffraction (HRXRD), and atomic force microscopy (AFM) revealed the formation of a continuous and fully-relaxed single-crystalline GeSn epilayer, however with a surface roughness of 3.5 nm. Stacking faults and reflection microtwins were also observed in cross-sectional HRTEM images. From Hall measurement, the concentration and mobility of holes, introduced by un-intentional p-type doping of the GeSn epilayers, were estimated to 8x10^16 cm-3 and 176 cm-2V-1s-1, respectively. In metal-semiconductor-metal (MSM) Schottky diodes, fabricated with these GeSnOI heterostructures, the dark current was observed to be lower by a decade, when compared to similar diodes fabricated with GeSn/Ge/Si(001) heterostructures. The results presented here are encouraging for the development of these engineered substrates for (opto)electronic applications.
Subjects: Applied Physics (physics.app-ph)
Cite as: arXiv:1802.03150 [physics.app-ph]
  (or arXiv:1802.03150v2 [physics.app-ph] for this version)
  https://doi.org/10.48550/arXiv.1802.03150
Journal reference: J. Phys. D: Appl. Phys. 51 (2018) 32LT01 (6pp)
Related DOI: https://doi.org/10.1088/1361-6463/aad176

Submission history

From: Krista R Khiangte [view email]
[v1] Fri, 9 Feb 2018 07:12:16 UTC (1,103 KB)
[v2] Fri, 27 Jul 2018 06:04:48 UTC (887 KB)
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