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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1707.02465 (cond-mat)
[Submitted on 8 Jul 2017 (v1), last revised 28 Jun 2018 (this version, v2)]

Title:Strain-controlled valley and spin separation in silicene heterojunctions

Authors:Yuan Li, H. B. Zhu, G. Q. Wang, Y. Z. Peng, J. R. Xu, Z. H. Qian, R. Bai, G. H. Zhou, C. Yesilyurt, Z. B. Siu, M. B. A. Jalil
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Abstract:We adopt the tight-binding mode-matching method to study the strain effect on silicene heterojunctions. It is found that valley- and spin-dependent separation of electrons cannot be achieved by the electric field only. When a strain and an electric field are simultaneously applied to the central scattering region, not only are the electrons of valleys K and K' separated into two distinct transmission lobes in opposite transverse directions, but the up-spin and down-spin electrons will also move in the two opposite transverse directions. Therefore, one can realize an effective modulation of valley- and spin-dependent transport by changing the amplitude and the stretch direction of the strain. The phenomenon of the strain-induced valley and spin deflection can be exploited for silicene-based valleytronics devices.
Comments: 6 pages, 6 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1707.02465 [cond-mat.mes-hall]
  (or arXiv:1707.02465v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1707.02465
Journal reference: Phys. Rev. B 97, 085427 (2018)
Related DOI: https://doi.org/10.1103/PhysRevB.97.085427

Submission history

From: Yuan Li [view email]
[v1] Sat, 8 Jul 2017 16:46:44 UTC (3,008 KB)
[v2] Thu, 28 Jun 2018 10:20:38 UTC (3,544 KB)
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