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Condensed Matter > Materials Science

arXiv:1706.08127 (cond-mat)
[Submitted on 25 Jun 2017]

Title:2D and 3D topological phases in BiTe$X$ compounds

Authors:S. V. Eremeev, I. A. Nechaev, E. V. Chulkov
View a PDF of the paper titled 2D and 3D topological phases in BiTe$X$ compounds, by S. V. Eremeev and 2 other authors
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Abstract:Recently, it was shown that quantum spin Hall insulator (QSHI) phase with a gap wide enough for practical applications can be realized in the ultra thin films constructed from two inversely stacked structural elements of trivial band insulator BiTeI. Here, we study the edge states in the free-standing Bi$_2$Te$_2$I$_2$ sextuple layer (SL) and the electronic structure of the Bi$_2$Te$_2$I$_2$ SL on the natural BiTeI substrate. We show that the topological properties of the Bi$_2$Te$_2$I$_2$ SL on this substrate keep $\mathbb Z_2$ invariant. We also demonstrate that ultra thin centrosymmetric films constructed in the similar manner but from related material BiTeBr are trivial band insulators up to five-SL film thickness. In contrast to Bi$_2$Te$_2$I$_2$ for which the stacking of nontrivial SLs in 3D limit gives a strong topological insulator (TI) phase, strong TI is realized in 3D Bi$_2$Te$_2$Br$_2$ in spite of the SL is trivial. For the last material of the BiTe$X$ ($X$=I,Br,Cl) series, BiTeCl, both 2D and 3D centrosymmetric phases are characterized by topologically trivial band structure.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1706.08127 [cond-mat.mtrl-sci]
  (or arXiv:1706.08127v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1706.08127
arXiv-issued DOI via DataCite
Journal reference: Phys. Rev. B 96, 155309 (2017)
Related DOI: https://doi.org/10.1103/PhysRevB.96.155309
DOI(s) linking to related resources

Submission history

From: Sergey Eremeev [view email]
[v1] Sun, 25 Jun 2017 15:45:01 UTC (7,592 KB)
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