Title:On the Universality of Electron Mobility in LaAlO$_3$/SrTiO$_3$ and bulk SrTiO$_3$

Abstract:Metallic LaAlO$_3$/SrTiO$_3$ (LAO/STO) interfaces have attracted enormous attention, but the relationship between electron mobility and electron density in such interfaces is poorly understood. Here we find that electron mobility for LAO/STO-based interfaces depends on the three-dimensional electron density near the interface, $n_{3D}$, in roughly the same way as it does for bulk doped STO. To this end, we derived a simple expression for $n_{3D}$ as a function of the measured sheet electron density, $n_s$. The similar dependency of electron mobility suggests that the electron scattering mechanisms in LAO/STO-based interfaces are the same as in bulk STO. We review these mechanisms and show how they influence the LAO/STO electron mobility. Specifically, scattering due to either ionized impurities or ionized donors are expected to limit the electron mobility depending on carrier density regime. In this regard, we argue that the quality of currently available STO substrates inherently limits the electron mobility in metallic STO-based heterointerfaces due to large concentrations of background impurities.