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Condensed Matter > Disordered Systems and Neural Networks

arXiv:1702.04876 (cond-mat)
[Submitted on 16 Feb 2017]

Title:Nonequilibrium transport and Electron-Glass effects in thin GexTe films

Authors:Z. Ovadyahu
View a PDF of the paper titled Nonequilibrium transport and Electron-Glass effects in thin GexTe films, by Z. Ovadyahu
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Abstract:We report on results of nonequilibrium transport measurements made on thin films of germanium-telluride (Ge_xTe) at cryogenic temperatures. Owing to a rather large deviation from stoichiometry (app. 10% of Ge vacancies), these films exhibit p-type conductivity with carrier-concentration N>10^20cm^(-3) and can be made either in the diffusive or strongly-localized regime by a judicious choice of preparation and post-treatment conditions. In both regimes the system shows persistent photoconductivity following excitation by a brief exposure to infrared radiation. Persistent photoconductivity is also observed in GexTe samples alloyed with Mn. However, in both Ge_xTe and GeMn_xTe_y the effect is much weaker than that observable in GeSb_xTe_y alloys suggesting that antimony plays an important role in the phenomenon. Structural studies of these films reveal an unusual degree of texture that is rarely realized in strongly-disordered systems with high carrier-concentrations. Anderson-localized samples of Ge_xTe exhibit non-ergodic transport which are characteristic of intrinsic electron-glasses, including a well developed memory-dip and slow relaxation of the excess conductance created in the excited state. These results support the conjecture that electron-glass effects with inherently long relaxation times is a generic property of all Anderson-localized systems with large carrier-concentration.
Subjects: Disordered Systems and Neural Networks (cond-mat.dis-nn); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1702.04876 [cond-mat.dis-nn]
  (or arXiv:1702.04876v1 [cond-mat.dis-nn] for this version)
  https://doi.org/10.48550/arXiv.1702.04876
arXiv-issued DOI via DataCite
Journal reference: Physical Review B 94, 155151 (2016)
Related DOI: https://doi.org/10.1103/PhysRevB.94.155151
DOI(s) linking to related resources

Submission history

From: Zvi Ovadyahu [view email]
[v1] Thu, 16 Feb 2017 07:06:36 UTC (555 KB)
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