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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1702.02829 (cond-mat)
[Submitted on 9 Feb 2017 (v1), last revised 25 Apr 2018 (this version, v2)]

Title:A graphene Zener-Klein transistor cooled by a hyperbolic substrate

Authors:W. Yang, S. Berthou, X. Lu, Q. Wilmart, A. Denis, M. Rosticher, T. Taniguchi, K. Watanabe, G. Feve, J.M. Berroir, G. Zhang, C. Voisin, E. Baudin, B. Plaçais
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Abstract:Engineering of cooling mechanisms is a bottleneck in nanoelectronics. Whereas thermal exchanges in diffusive graphene are mostly driven by defect assisted acoustic phonon scattering, the case of high-mobility graphene on hexagonal Boron Nitride (hBN) is radically different with a prominent contribution of remote phonons from the substrate. A bi-layer graphene on hBN transistor with local gate is driven in a regime where almost perfect current saturation is achieved by compensation of the decrease of the carrier density and Zener-Klein tunneling (ZKT) at high bias. Using noise thermometry, we show that this Zener-Klein tunneling triggers a new cooling pathway due to the emission of hyperbolic phonon polaritons (HPP) in hBN by out-of-equilibrium electron-hole pairs beyond the super-Planckian regime. The combination of ZKT-transport and HPP-cooling promotes graphene on BN transistors as a valuable nanotechnology for power devices and RF electronics.
Comments: 15 pages, 4 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1702.02829 [cond-mat.mes-hall]
  (or arXiv:1702.02829v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1702.02829
arXiv-issued DOI via DataCite
Journal reference: Nature Nanotechnology 13, 47 (2018)
Related DOI: https://doi.org/10.1038/s41565-017-0007-9
DOI(s) linking to related resources

Submission history

From: Bernard Placais [view email]
[v1] Thu, 9 Feb 2017 13:34:54 UTC (4,437 KB)
[v2] Wed, 25 Apr 2018 09:40:01 UTC (2,437 KB)
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